Electrochemical deposition of tin doped zinc selenide (SnZnSe) thin film material

Ikhioya, Imosobomeh Lucky; Okoli, Donald N.; Ekpunobic, Azibuike J.

doi:10.26655/AJNANOMAT.2020.3.3

Document Type : Original Article

Authors

¹ Nano Research Laboratory, University of Nigeria, Department of Physics and Astronomy, Nsukka, Enugu State, Nigeria

² Department of Physics and Astronomy, Faculty of Physical Sciences, University of Nigeria, Nsukka, Enugu State

³ Department of Physics and Industrial Physics, Faculty of Physical Sciences, Nnamdi Azikiwe University, Awka, Anambra State

https://doi.org/10.26655/AJNANOMAT.2020.3.3

Abstract

In this research study, the growth of SnZnSe thin film materials was carried out using the cationic precursor, which was an aqueous solution of 0.035 mol solution of ZnSO₄.7H₂O while the anionic precursor was 0.1 mol solution of selenium metal powder was prepared by dissolving with 4 mL of hydrogen chloride (HCl). The XRD of the films deposited on FTO substrates at different dopant concentration 1%, 2%, 3% and 4% showed the reflection peaks at (220), (221), (300), (310), (311), (222) and (320) with the lattice constant of a=7.189 Ǻ. The SEM results revealed the random distribution of tiny nano-grains on the substrate, the nano-grains were observed to agglomerate due to the presence of large free energy characteristics of small particles. The optical bandgap of the deposited material enhanced from 2.0-2.3 eV as the dopant concentration increased.

Graphical Abstract

Keywords

Main Subjects

Application of nanomaterial

References

[1]. Young H.D., Freedman R.A. Addison Wesley., 2008, I:232

[2]. Wei A., Zhao X., Liu J., Zhao Y. Physica B., 2013, 410:120

[3]. Venkatachalam S., Jeyachandran Y.L., Sureshkumar P., Dhayalraj A., Mangalaraj D., Narayandass Sa.K., Velumani S. Materials Characterization, 2007, 58:794

[4]. Xu J., Wang W., Zhang X., Chang X., Shi Z., Haarberg G.M. J. Alloys Compd., 2015, 632:778

[5]. Agawane G.L., Seung W.S., Suryawanshia M.P., Gurav K.V., Moholkara A.V., Leeb J.Y., Patil P.S., Jae H.Y., Jin H.K. Ceramics International, 2013, 06:011

[6]. Bakiyaraj G., Dhanasekaran R. Appl. Nanosci., 2013, 3:125

[7]. Deshmukh L.P., Pingale P.C., Kamble S.S., Mane S.T., Pirgonde B.R., Sharonb M., Sharon M. Mater. Lett., 2013, 92:308

[8]. Chandramohan R., Mahalingam T., Chu J.P., Sebastian P.J. Journal of New Material for Electrochemical Systems, 2005, 8:143

[9]. Akhtar M.S., Malik M.A., Riaz S., Naseem S., O'Brien P. Mater. Sci. Semicond. Process., 2015, 30:292

[10]. Dhanasekaran V., Mahalingam T., Rhee J., Chu J.P. Optik, 124:255

[11]. Lohar G.M., Shinde S.K., Rath M.C., Fulari V. J. Mater. Sci. Semicond. Process., 2014, 26:548

[12]. Mehta C., Saini G.S.S., Abbas J.M., Tripathi S. K. Appl. Surf. Sci., 2009, 256:608–614

[13]. Mahalingam T., Kathalingam A., Lee S., Moon S., Kim D.Y. Journal of New Material for Electrochemical Systems, 2007, 10:15-19

[14]. Pardo A.P., Gonzalez H.G., Castro-Lora López-Carreño L.D., Martínez H.M., Salcedo N.J. T. J. Phys. Chem. Solid., 2014, 75:713

[15]. Mahalingam T., Kathalingam A., Lee S., Moon S., Kim Y.D. J. New Mater. Electrochemi. Sys., 2007, 10:15

[16]. Imran M., Abida S., Nawazish A.K., A.A. Khurram, Nasir M. Thin Solid Film., 2018, 11:1

[17]. Pentia E., Draghici V., Sarua G., Mereu B., Pintilie L., Sava F., Popescu M. J. Electrochem. Soc., 2004, 151:729

[18]. Rajesh Kumar T., Prabukanthan, Harichandran G., Theerthagiri J., Chandrasekaran S, Madhava J. Ionics, 2017, 23:2497

[19]. Rajesh T.K., Prabukanthan P., Harichandran G., Theerthagiri J., Tetiana T., Gilberto M., Bououdina M. Journal of Solid State Electrochemistry, 2017, 27:254

[20]. Sadekar H.K., Ghule A.V., Sharma R. Composite Part B., 2013, 44:553

[21]. Samantilleke A.P., Boyle M.H., Young J., Dharmadas I.M., Journal of Materials Science: Materials in Electronics, 1998, 9:231

[22]. Ahna K., Jeon J.H., Jeong S.Y., Kim J.M., Ahn H.S., Kim J.P., Jeong E.D., Cho C.R. Current Applied Physics., 2012, 12:1465

[23]. Hwang D.H., Ahn J.H., Hui K.N., Hui K.S., Son Y.G. Nanoscale Research Letters, 2012, 7:1

[24]. Bosco J.P., Demers S.B., Kimball G.M., Lewis N.S., Atwater H.A. Journal of Applied Physics., 2012, 112:093703

[25]. Yano S., Schroeder R., Sakai H., Ullrich B. Applied Physics Letters., 2003, 82:2026

[26]. Huang M.W., Cheng Y.W., Pan K.Y., Chang C.C., Shieu F.S., Shih H.C. Applied Surface Science., 2012, 261:665

[27]. Xu G., Ji S., Miao C., Liu G., Ye C. Journal of Materials Chemistry, 2012, 22:4890

[28]. Nagamani K., Revathi N., Prathap P., Lingappa Y., Reddy K.T.R. Current Applied Physics., 2012, 12:380

[29]. Agawane G.L., Wook Shin S., Sung Kim M., Suryawanshi M.P., Gurav K.V., Moholkar A.V., Yong Lee J., Yun J.H., Patil P.S., Hyeok Kim J. Current Applied Physics., 2013, 13:850

[30]. Ikhioya I.L., Ekpunobi A.J. Journal of Nigeria Association of Mathematical Physics, 2014, 28:281

[31]. Ikhioya I.L., Ekpunobi A.J. Journal of Nigeria Association of Mathematical Physics., 2015, 29:325

[32]. Harbeke G. North-holland Pub. Co. Amsterdam, 1972, 234

[33]. Ikhioya I.L., Okoli D.N., Ekpunobi A.J. SSRG International Journal of Applied Physics, 2019, 6:55

[34]. Ikhioya I.L., Okoli D.N., Ekpunobi A.J. International Journal of ChemTech Research, 2019, 12:200

[35]. Sajjadnejad M., Karimi Abadehb H. Section A: Theoretical, Engineering and Applied Chemistry, 2020, 4:422

[36]. Miranzadeh M., Afshari F., Khataei B., Kassaee M. Advanced Journal of Chemistry, Section A: Theoretical, Engineering and Applied Chemistry, 2020, 4:In press

[37]. Magu T., Agobi A., Hitler L., Dass P. Journal of Chemical Reviews, 2019, 1:19

[38]. Ikhioya I.L., Okoli D.N., Ekpunobi A.J. International Journal of ChemTech Research, 2019, 12:200

[39]. Ikhioya I.L., Okoli D.N, Ekpunobi A.J. International Journal of Applied Physics, 2019, 6:55

Asian Journal of Nanoscience and Materials

Electrochemical deposition of tin doped zinc selenide (SnZnSe) thin film material

References

References

Volume 3, Issue 3
July 2020
Pages 189-202

Electrochemical deposition of tin doped zinc selenide (SnZnSe) thin film material

References

References

Volume 3, Issue 3July 2020Pages 189-202

Volume 3, Issue 3
July 2020
Pages 189-202